Search results for "electron-beam lithography"
showing 10 items of 36 documents
Holographic recording in amorphous chalcogenide semiconductor thin films
2003
Abstract A detailed study of the amorphous As–S–Se and As2S3 films as recording media for optical holography and electron beam lithography is presented. The results of R&D on resist based on the amorphous As–S–Se thin films for manufacturing of embossed holographic labels are discussed. The holographic recording of transmission and Bragg gratings was studied.
Sensing properties of assembled Bi2S3nanowire arrays
2015
Bismuth sulfide (Bi2S3) nanowires were grown in porous aluminium oxide template and a selective chemical etching was applied to transfer the nanowires to a solution. Well aligned nanowire arrays were assembled on pre-patterned silicon substrates employing dielectrophoresis. Electron beam lithography was used to connect aligned individual nanowires to the common macroelectrode. In order to evaluate the conductometric sensing performance of the Bi2S3 nanowires, current–voltage characteristics were measured at different relative humidity (RH) levels (5–80%) / argon medium. The response of the Bi2S3 nanowires depending of RH is found to be considerably different from those reported for other ty…
Surface plasmon near-field imaging of very thin microstructured polymer layers.
2004
We report on the near-field imaging of microstructured polymer layers deposited on an homogeneous metal thin film on which a surface plasmon mode is excited. The microstructures in the polymer layers are designed by electron beam lithography, and the near-field imaging is performed with a photon scanning tunneling microscope (PSTM). We show that, despite their very small height, the microstructures can be conveniently imaged with a PSTM thanks to the field enhancement at the surface of the metal thin film supporting the surface plasmon. The influence of the illumination conditions on the contrast of the PSTM images is discussed. In particular, we show that both the field enhancement and the…
Fabrication and characterization of chromium based single-electron transistors with evaporated chromium oxide barrier tunnel junctions
1999
We fabricated chromium based single-electron transistors comprising small-area Cr/CrOx/Cr tunnel junctions with an evaporated chromium oxide barrier. The transistors are fabricated using e-beam lithography with a bilayer resist and two-angle shadow evaporation. We describe the fabrication process and discuss the device characteristics.
Potential of amorphous Mo–Si–N films for nanoelectronic applications
2003
The properties of amorphous metallic molybdenum–silicon–nitrogen (Mo–Si–N) films were characterised for use in nanoelectronic applications. The films were deposited by co-sputtering of molybdenum and silicon targets in a gas mixture of argon and nitrogen. The atomic composition, microstructure and surface roughness were studied by RBS, TEM and AFM analyses, respectively. The electrical properties were investigated in the temperature range 80 mK to 300 K. No transition into a superconductive state was observed. Nanoscale wires were fabricated using electron beam lithography with their properties measured as a function of temperature.
Polymer based tuneable photonic crystals
2007
We report on the fabrication and characterization of photonic crystal slab waveguide resonators which contain a nanostructured second-order nonlinear optical polymer. The combination of a photonic crystal resonator realized in a second-order nonlinear optical polymer allowed the detection of electro-optical modulation of light with a sub-1-V sensitivity. Furthermore we report on the synthesis of novel nonlinear optical polymers with large second-order hyperpolarizability and improved glass transition temperature. The polymer slab waveguide is micro patterned by means of electron-beam lithography and reactive ion etching. The photonic crystal slab-based resonator consisted of a square lattic…
Fabrication and characterization of small tunnel junctions through a thin dielectric membrane
1998
We show that a small tapered hole through a thin silicon nitride membrane provides a mask for tunnel junction structures. Our experiments imply, unlike in the conventional planar electron beam lithography, that tunnel junctions are well voltage biased in this structure with vanishingly small on-chip impedance. Our technique allows fabrication of double junctions, and even multijunction linear arrays, with small metallic islands in between.
Direct Surface Relief Formation in Polymer Films
2013
Due to active development of nanoelectronics, the studies of methods of nanorelief surface formation in different materials, in particular polymers are very important. Organic polymer films in consequence of their dielectric and optical properties have been used as basis of these devices. In this paper, the possibility of UV optical record and electron beam lithography in different type of polymeric films was studied. Mechanisms of molecular structure changes: photoisomerization, destruction, cross-linking and oxidation have been discussed. The results of UV illumination of polyurethanes, polyacrylates, and some block-copolymers were described. The element analysis of polybutadiene block co…
Bringing Plasmonics Into CMOS Photonic Foundries: Aluminum Plasmonics on Si$_{3}$N$_{4}$ for Biosensing Applications
2019
We present a technology platform supported by a new process design kit (PDK) that integrates two types of aluminum plasmonic waveguides with Si $_{3}$ N $_{4}$ photonics towards CMOS-compatible plasmo-photonic integrated circuits for sensing applications. More specifically, we demonstrate the fabrication of aluminum slot waveguide via e-beam lithography (EBL) on top of the Si $_{3}$ N $_{4}$ waveguide and an optimized fabrication process of aluminum plasmonic stripe waveguides within a CMOS foundry using EBL. Experimental measurements revealed a propagation length of 6.2 μm for the plasmonic slot waveguide in water at 1550 nm, reporting the first ever experimental demonstration of a plasmon…
Exploring integration prospects of opal-based photonic crystals
2003
Different methods of functionalisation of thin opal films are discussed, including synthesis of opals on pre-patterned substrates, post-synthesis electron beam lithography, preparation of opals with heterogeneous photonic band gap structure and integrating opals with light sources. These approaches have been tested experimentally and key technological problems have been identified.